Internal radiation losses in semiconductor lasers with stressed InGaAsP/InP quantum wells
نویسندگان
چکیده
منابع مشابه
Modeling and Simulation of Strained Quantum Wells in Semiconductor Lasers
Amodel allowing for efficiently obtaining band structure information on semiconductor Quantum Well structures will be demonstrated which is based on matrix-valued kp-Schrödinger operators. Effects such as confinement, band mixing, spin-orbit interaction and strain can be treated consistently. The impact of prominent Coulomb effects can be calculated by including the Hartree interaction via the ...
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ژورنال
عنوان ژورنال: Journal of Physics: Conference Series
سال: 2018
ISSN: 1742-6588,1742-6596
DOI: 10.1088/1742-6596/1135/1/012083